Are MOSIS SPICE BSIM3 parameters accurate enough for analog and RF designs?
The focus of the MOSIS BSIM3 parameter extraction and optimization strategies to date has been basic DC characterization and digital simulations. For critical designs the wafer fabricator’s SPICE parameters may be more accurate, not only because they may be more precisely tuned to particular process features like the channel doping concentration (NCH), but also because they are binned and thus may fit specific device geometries better. We expect that MOSIS SPICE parameters will be applied more and more to analog and RF circuits, and we are turning our efforts in that direction as time and resources permit.
Related Questions
- I have SPICE BSIM2 parameters for a MOSIS process, and I also have the MOSIS BSIM3 parameters for the wafer lot that contained my design. Which parameters will give the more accurate simulations?
- Does MOSIS provide SPICE model parameters for the NPN transistors available in some MOSIS technologies or for any bipolar devices?
- What are the frequency limits for MOSIS SPICE parameters?
