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Can you provide a brief overview of the Diodes, Inc. Rectifier Die Glass Passivation Process (GPP)?

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Can you provide a brief overview of the Diodes, Inc. Rectifier Die Glass Passivation Process (GPP)?

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The Diodes Inc. Glass Passivation Process (GPP) for Rectifier Dice occurs in the wafer form after the Wafer Diffusion (P+) Process. Immediately after the Diffusion Process, the wafer is masked with a photoresist film and the dice are pattern etched through the junction plane, this operation is called mesa etching. The exposed p-n junction surface is then passivated in a two-layer process. • First, an oxygen doped, Semi-Insulating Poly Crystalline Silicon (SIPOS) layer is deposited onto the silicon junction surface by Low Pressure Chemical Vapor Deposition (LPCVD) to stabilize the region. • Second, a thick layer of fired – on, high temperature glass is deposited over the SIPOS layer and protects the junction from ambient contamination and mechanical damage. The wafers are then masked with a photoresist film and the top (Anode) Contact Metallization Layer of sintered nickel is applied (see figure 1). Figure 1.

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